MPS8050

MPS8050 N MPS8050 Discrete POWER & Signal Technologies C BE TO-92 NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage 25 VCBO Collector-Base Voltage 40 VEBO Emitter-Base Voltage 6.0 IC Collector Current - Continuous 1.0 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max MPS8050 625 5.0 83.3 200 Units V V V A °C Units mW mW/°C °C/W °C/W MPS8050 Electrical Characteristics Symbol Parameter NPN General Purpose Amplifier (continued) TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Curre...