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DWC306 Dataheets PDF



Part Number DWC306
Manufacturers First Silicon
Logo First Silicon
Description Dual Bias Resistor Transistors
Datasheet DWC306 DatasheetDWC306 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA DWC301~311 DWC317, 322, 323 Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by in.

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SEMICONDUCTOR TECHNICAL DATA DWC301~311 DWC317, 322, 323 Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the DWC3xx series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • We declare that the material of product compliance with RoHS requirements. 6 5 4 1 2 3 SC-88/SOT-363 MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = 25°C Derate above 25°C P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C 2.0 (Note 2.) Thermal Resistance – R θJA 670 (Note 1.) °C/W Junction-to-Ambient 490 (Note 2.) Characteristic (Both Junctions Heated) Symbol Max Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead PD R θJA R θJL 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) Junction and Storage Temperature T J , T stg –55 to +150 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Unit mW mW/°C °C/W °C/W °C 6 54 Q2 R1 R2 R2 R1 Q1 12 3 MARKING DIAGRAM 6 54 7X 1 23 7X = Device Marking (See Page 2) DEVICE MARKING INFORMATION See specific marking information in he device marking table on page 2 of his data sheet. 2009. 12. 04 Revision No : 0 1/10 DWC301~311, DWC317, 322, 323 DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION Device Package Marking R1(K) R2(K) DWC301T1G SOT-363 7J 4.7 4.7 DWC301T3G SOT-363 7J 4.7 4.7 DWC302T1G DWC302T3G SOT-363 SOT-363 7A 7A 10 10 10 10 DWC303T1G SOT-363 7B 22 22 DWC303T3G SOT-363 7B 22 22 DWC304T1G SOT-363 7C 47 47 DWC304T3G SOT-363 7C 47 47 DWC305T1G SOT-363 7M 2.2 47 DWC305T3G SOT-363 7M 2.2 47 DWC306T1G SOT-363 7K 4.7 47 DWC306T3G DWC307T1G SOT-363 SOT-363 7K 7D 4.7 47 10 47 DWC307T3G SOT-363 7D 10 47 DWC308T1G SOT-363 7L 22 47 DWC308T3G SOT-363 7L 22 47 DWC309T1G SOT-363 7P 47 22 DWC309T3G DWC310T1G SOT-363 SOT-363 7P 7F 47 22 4.7 DWC310T3G SOT-363 7F 4.7 DWC311T1G DWC311T3G SOT-363 SOT-363 7E 7E 10 10 DWC317T1G DWC317T3G SOT-363 SOT-363 7H 7H 2.2 2.2 2.2 2.2 DWC322T1G SOT-363 7N 100 100 DWC322T3G SOT-363 7N 100 100 DWC323T1G DWC323T3G SOT-363 SOT-363 7G 7G 11 11 Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 2009. 12. 04 Revision No : 0 2/10 DWC301~311, DWC317, 322, 323 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 50 V, I E = 0) I CBO – – 100 nAdc Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) Emitter-Base Cutoff Current DWC302 I CEO I EBO – – 500 nAdc – – 0.5 mAdc (V EB = 6.0 V, I C = 0) DWC303 – – 0.2 DWC304 – – 0.1 DWC307 – – 0.2 DWC310 – – 1.9 DWC311 – – 0.9 DWC317 – – 2.3 DWC323 – – 4.3 DWC301 – – 1.5 DWC306 – – 0.18 DWC308 – – 0.13 DWC305 – – 0.2 DWC309 – – 0.13 DWC322 – – 0.05 Collector-Base Breakdown Voltage (I C = 10 µA, I E = 0) V (BR)CBO 50 – – Vdc Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0) V (BR)CEO 50 – – Vdc 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 2009. 12. 04 Revision No : 0 3/10 DWC301~311, DWC317, 322, 323 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Characteristic Symbol ON CHARACTERISTICS(Note 5.) DC Current Gain DWC302 h FE (V CE = 10 V, I C = 5.0 mA) DWC303 DWC304 DWC307 DWC310 DWC311 DWC317 DWC323 DWC301 DWC306 DWC308 DWC305 DW309 DWC322 Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA) V CE(sat) (I C= 10mA, I B= 5mA) DWC317/DWC323 (I C= 10mA, IB= 1mA) DWC310/DWC311 DWC301/DWC306/DWC308 Output Voltage (on) (V CC = 5.0 V, V B.


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