HF4N65

HF4N65 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.0 A 2.5 -- Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 650 ----- -- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---- Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 300 V, ID = 4.0 A, RG = 25 Ω (Note 4,5) VDS = 480V, ID = 4.0 A, VGS = 10 V (Note 4,5) -------- Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS = 4.0 A, VGS = 0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS = 4.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) ------ Typ Max Units -- 4.5 2.0 2.8 V Ω -- -- V 0.65 -- V/℃ -- 1 ㎂ -- 10 ㎂ -- 100 ㎁ -- -100 ㎁...