DB3TG

DB3-DB3TG — 150mW Bi-directional Trigger Diodes DB3-DB3TG 150mW Bi-directional Trigger Diodes Features VBO : 32V Version Low break-over current DO-35 package (JEDEC) Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and terminals are readily solderable RoHS compliant High reliability glass passivation insuring parameter stability and protection against junction contamination. Terminal: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed : 260°C/10 seconds September 2010 DO-35 Color Band Denotes Cathode Absolute Maximum Ratings and Electrical Characteristics Symbol Parameter VBO ±VBO IBO ΔV IB VO PD IFRM Rθja TJ, TSTG Break-over Voltage @ C=22nF Min. Typ. Max. Break-over Voltage Symmetry @ C=22nF Max. Break-over Current @ C=22nF Max. Dynamic Break-over Voltage @ IBO to IF=10mA Min. Leakage Current @ VB=0.5VBO(Max.) Max. Output Voltage *see diagram 1 Min. Power Dissipation Repetitive Peak Forward Current, Pulse Width=20μsec Typical Thermal Resistance, Junction to Ambient (Note1) Junction and Storage Temperature Range Value DB3 DB3TG 28 30 32 32 36 34 ±3 ±2 100 15 59 10 5 150 2 400 -40 to +125 * Rating at 25°C ambient temperature unless otherwise specified. * Notes: 1. Valid provided that electrodes are kept at ambient temperature Units V V V V μA V μA V mW A °C/W °C © 2010 Fairchild Semiconductor Corpor...