INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF530FI
·FEATURES ·Low RDS(on) ·VGS ...
INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
IRF530FI
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
100 ±20
V V
ID Drain Current-Continuous
10 A
IDM Drain Current-Single Plused
40 A
PD Total Dissipation @TC=25℃
40 W
Tj Max. Operating Junction Temperature -55~175 ℃
Tstg Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.9 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
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INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
IRF530FI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
100
V
VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VDS= VGS; ID= 0.25mA VGS= 10V; ID= 8A VGS= ±20V;VDS= 0
2
4V
0.16 Ω
±500
nA
IDSS Zero Gate Voltage Drain Current
VDS= 100V; VGS=0...