IRF460

isc N-Channel MOSFET Transistor DESCRIPTION ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rating ·Hermetically Sealed ·Simple Drive Requirements ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 21 A Ptot Total Dissipation@TC=25℃ 300 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.42 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W IRF460 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON)-1 Drain-Source On-stage Resistance VGS= 10V; ID= 14A RDS(ON)-2 Drain-Source On-stage Resistance VGS= 10V; ID= 21A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS= 0 VSD Diode Forward Voltage IF= 21A; VGS= 0 IRF460 MIN TYP MAX UNIT ...