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IRF442 Dataheets PDF



Part Number IRF442
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet IRF442 DatasheetIRF442 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF442 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg .

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF442 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-continuous@ TC=25℃ 7.0 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF442 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 4.4A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 VSD Diode Forward Voltage IF= 8A; VGS= 0 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.0MHz MIN TYP MAX UNIT 500 V 2 4V 1.10 Ω ±100 nA 250 uA 2.0 V 1225 1600 pF 200 350 pF 85 150 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=250V,ID=8A VGS=10V,RGEN=9.1Ω RGS=9.1Ω Tf Fall Time MIN TYP MAX UNIT 15 21 ns 22 35 ns 49 74 ns 20 30 ns isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .


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