Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF442
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated
temperature ·Rugged
APPLICATIONS ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
500 ±20
V V
Drain Current-continuous@ TC=25℃ 7.0 A
Total Dissipation@TC=25℃
125 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-A Thermal Resistance,Junction to Ambient 30 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF442
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 4.4A
IGSS Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VSD Diode Forward Voltage
IF= 8A; VGS= 0
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V, F=1.0MHz
MIN TYP MAX UNIT
500 V
2 4V
1.10 Ω
±100
nA
250 uA
2.0 V
1225 1600
pF
200 350
pF
85 150 pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr Rise Time Td(off) Turn-off Delay Time
VDD=250V,ID=8A VGS=10V,RGEN=9.1Ω RGS=9.1Ω
Tf Fall Time
MIN TYP MAX UNIT 15 21 ns 22 35 ns 49 74 ns 20 30 ns
isc website:www.iscsemi.cn
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