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CMS30I30A

Toshiba

Schottky Barrier Diode

Schottky Barrier Diode CMS30I30A 1. Applications • Secondary Rectification in Switching Regulators • Reverse-Current Pro...


Toshiba

CMS30I30A

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Schottky Barrier Diode CMS30I30A 1. Applications Secondary Rectification in Switching Regulators Reverse-Current Protection in Mobile Devices 2. Features (1) Peak forward voltage: VFM = 0.49 V (max)@IF = 3.0 A (2) Average forward current: IF(AV) = 3.0 A (3) Repetitive peak reverse voltage: VRRM = 30 V (4) Small, thin package suitable for high-density board assembly Toshiba Nickname: M-FLATTM 3. Packaging and Internal Circuit Pin Assignment CMS30I30A 1: Anode 2: Cathode 3-4E1S 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage VRRM  30 V Average forward current IF(AV) (Note 1) 3.0 A Non-repetitive peak forward surge current IFSM (Note 2) 30 Junction temperature Tj  150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tℓ = 102 , square wave (α = 180°), VR = 15 V Note ...




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