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CCS15S30

Toshiba

Schottky Barrier Diode


Description
Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications High-Speed Switching 2. Features (1) Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit CCS15S30 1: Cathode 2: Anode CST2C 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltag...



Toshiba

CCS15S30

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