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CBS10S30

Schottky Barrier Diode

Description

Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathode 2: Anode 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified cur...

Toshiba

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CBS10S30 Schottky Barrier Diode - Toshiba

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