1SS406

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application 1SS406 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.50V (typ.) : IR= 0.5μA (max) : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P* 50 mA 1A 200 mW USC Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ― TOSHIBA 1-1E1A Weight: 0.004g(Typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm. Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT...