IS42RM16200D

IS42/45SM/RM/VM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features  JEDEC standard 3.3V, 2.5V, 1.8V power supply Auto refresh and self refresh All pins are compatible with LVCMOS interface 4K refresh cycle / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst Programmable CAS Latency : 2,3 clocks All inputs and outputs referenced to the positive edge of the system clock Data mask function by DQM Internal dual banks ...