STA3350Q

Applications Power amplifier application High current switching application Features Low saturation voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA Large collector current capacity: IC=-3A Small and compact SMD type package “Green” device and RoHS compliant device Available in full lead (Pb)-free device STA3350Q PNP Silicon Transistor PIN Connection SOT-223 Ordering Information Type NO. Marking Package Code STA3350Q STA3350 YWW STA3350: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) SOT-223 Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature range * : Single pulse, tp= 300 ㎲ ** : When mounted on copper substrate(250 ㎟×0.8t) Characteristic Thermal resistance Junction-ambient Symbol VCBO VCEO VEBO IC ICP* PC PC** TJ Tstg Symbol Rth(J-a) Rating -50 -50 -6 -3 -6 1.1 1.5 150 -55~150 [Ta=25℃] Unit V V V A(DC) A(Pulse) W W °C °C Typ. - Max 113.6 83.3** Unit ℃/W ℃/W KSD-T5A008-000 1 STA3350Q Electrical Characteristics Characteristic Symbol Test Condition Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0 [Ta=25℃] Min. Typ. Max. Unit -50 - - V Collector cut-off current ICBO VCB=-50V, IE=0 - - -1 μA Emitter cut-off current IEBO VEB=-6V, IC=0 - - -1 μA DC current gain Collector-emitter saturation voltage hFE VCE=-2V, IC=-0.5A* hFE VCE=-2V, IC=-2A* VCE(sat) IC=-1A, IB=-0.05A* 120 - ...