Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF256
DESCRIPTION ·Drain Current ID=20A@ TC=25℃ ·Drain Source Voltage
: VDSS= 275V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.14Ω(Max) ·Nanosecond Switching Speed
APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
275 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 20 A
Total Dissipation@TC=25℃
150 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
0.83 30
℃/W ℃/W
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF256
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS(TH) Gate Threshold Voltage
VGS=0; ID=250µA VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=12A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current
VDS=275V; VGS=0
VSD Diode Forward Voltage
IS=20A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
ID=16A; VDD=95V; RL=4.7Ω
td(off)
Turn-off Delay Time
MIN TYPE MAX UNIT 275 V 2.0 4.0 V
0.14 Ω ±100 nA 250 uA
1.8 V 2700 130 pF 580
84 130 19 29
ns 65 98 75 110
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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.