INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF235
DESCRIPTION ·Drain Current –ID...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF235
DESCRIPTION ·Drain Current –ID=6.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.68Ω(Max) ·Nanosecond Switching speeds
APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Drivers for high-power bipolar switching
transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
250 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 8.1 A
Total Dissipation@TC=25℃
75 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
1.67 80
℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4.1A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=250V; VGS=0
VSD Diode Forward Voltage
IS=8.1A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Cap...