2SK2111

SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 3.00+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation * Channel temperature Storage temperature * 16 cm2X0.7mm,ceramic substrate used Symbol VDSS VGSS ID Idp PD Tch Tstg Rating 60 20 1.0 2.0 2.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol Testconditons IDSS VDS=60V,VGS=0 IGSS VGS= 20V,VDS=0 VGS(th) VDS=10V,ID=1mA Yfs VDS=10V,ID=0.5A VGS=4.0V,ID=0.5A RDS(on) VGS=10V,ID=0.5A Ciss Coss VDS=10V,VGS=0,f=1MHZ Crss td(on) tr td(off) ID=0.5A,VGS(on)=10V,RL=50 ,RG=10 ,VDD=25V tf +0.10.40 -0.1 1 Gate 11.. SBoauserce 222.. DDCroralalienicntor 333.. GSEmaotuieitrtcere Min Typ Max Unit 1.0 A 10 A 0.8 1.4 2.0 V 0.4 S 0.32 0.6 0.24 0.45 170 pF 87 pF 32 pF 2.8 ns 2.3 ns 55 ns 27 ns Marking Marking NU www.kexin.com.cn 1 ...