2SC2987A

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2987A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1227A APPLICATIONS ·For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 20 A 120 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2987A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A VBE(sat) Base -Emitter Saturation Voltage IC= 5.0A; IB= 0.5A ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.5 V 2.0 V 50 μ A 50 μ A hFE-1 DC Current Gain IC= 2A; VCE= 5V 60 320 hFE-2 DC Current Gain IC= 5A; VCE= 5V 40 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 190 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 50 MHz  hFE-1 Classifications RQP 60-120 100-200 160-320 isc Website：www.iscsemi.cn 2 isc & iscsemi is ...