2SC2526

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1076 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2526 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter –Base Breakdown Voltage IC= 50uA ; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE DC Current Gain IC=1A; VCE= 5V hFE DC Current Gain IC= 7A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz fT Current-Gain—Bandwidth Product IE= 1A; VCE= 10V,f=10MHZ Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 7.5A ,RL= 4Ω, IB1= -IB...