IRF150

SEMICONDUCTOR IRF150 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. D G D S TO-3PB (IRF150B) GD S TO-247AB (IRF150C) FEATURES RDS(ON) = 0.055Ω @ VGS = 10V Ultra low gate charge(110nC Max.) Low reverse transfer capacitance (CRSS = 230pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 42 100 0.055 @ VGS = 10V 110 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current (VGS=10V) TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) lAR=22A, RGS=50Ω, VGS=10V EAS Single pulse avalanche energy(Note 2) lAS=22A, L=1.7mH dv/dt Peak diode recovery dv/dt(Note 3) VALUE 100 100 ±20 42 30 160 22 16 420 5.0 UNIT V A mJ V /ns Total power di...