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CM400HU-24F

Mitsubishi Electric Semiconductor

IGBT MODULES

MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE CM400HU-24F ¡IC ...........................................


Mitsubishi Electric Semiconductor

CM400HU-24F

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MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE CM400HU-24F ¡IC ................................................................... 400A ¡VCES ......................................................... 1200V ¡Insulated Type ¡1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 93±0.25 13.5 26 29 20.5 4–φ6.5 MOUNTING HOLES 8.5 12.55 10 9.5 19.1 62 48±0.25 17.2 6.5 G E 6.5 8.5 E 21.15 C CM 2–M4NUTS 18 Tc measured point 2–M8NUTS 4 24.35 E +1 26 –0.5 C RTC LABEL 34+1 –0.5 E G CIRCUIT DIAGRAM Aug. 1999 MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 400 800 400 800 1600 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 Unit V V A A W °C °C V Nm Nm Nm g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth...




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