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CM400DU-12F

Powerex Power Semiconductors

IGBT Module

CM400DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual...


Powerex Power Semiconductors

CM400DU-12F

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Description
CM400DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 400 Amperes/600 Volts TC MEASURING POINT A D T (4 TYP.) F G2 B E CM C2E1 C L E2 H U J H E2 C1 E1 G1 V Q S - NUTS (3 TYP) Q P N G K K K R M C L G2 E2 RTC C2E1 E2 RTC E1 G1 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-12F is a 600V (VCES), 400 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 400 VCES Volts (x 50) 12 C1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 4.25 2.44 3.66± 0.01 1.88± 0.01 0.67 0.16 0.24 0.59 0.55 Millimeters 108.0 62.0 93.0± 0.25 48.0± 0.25 17.0 4.0 6.0 15.0 14.0 Dimensions L M N P Q R S T U V Inches 0.87 0.33 0.10 0.85 0.98 0.11 M6 0.26 Dia. 0.02 0.62 Millimeters 22.0 8.5 2.5 21.5 25.0 2.8 M6 6.5 Dia. 0.5 15.85 1.14 +0.0...




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