MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE INSULATED TYPE
A B TC Measured Point E
K(4 - Mounting Hole...
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE INSULATED TYPE
A B TC Measured Point E
K(4 - Mounting Holes)
H D C F CM J H
3 - M6 NUTS
R
R
G
TAB #110, t = 0.5
M
P
M
P
M
N
L
Q
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each
transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ UPS ٗ Forklift
G2 E2
C2E1
E2
C1
E1 G1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 4.33 3.66±0.01 3.15 2.44±0.01 0.55 0.86 0.94 0.24 Millimeters 110.0 93.0±0.25 80.0 62.0±0.25 14.0 21.75 24.0 6.0 Dimensions J K L M N P Q R Inches 0.59 0.26 Dia. 1.14 +0.04/-0.02 0.71 0.33 0.28 0.83 0.98 Millimeters 15.0 6.5 Dia. 29 +1.0/-0.5 18.0 8.5 7.0 21.0 25.0
Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM350DU-5F is a 250V (VCES), 350 Ampere Trench Gate Design Dual IGBT Module.
Type CM Current Rating Amperes 350 VCES Volts (x 50) 5
Sep.1998
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless o...
