BT131-600F

INCHANGE Semiconductor isc Triacs isc Product Specification BT131-600F FEATURES ·With TO-92 package ·Glass passivated,sensitive gate triacs in a plastic envelope ·Intended for use in general purpose bidirectional switching and phase control applications. ·These devices are intended to be interfaced directly to microcontrollers,logic intergrated circuits and other low power gate trigger circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN VDRM VRRM IT(RMS) ITSM PGM PG(AV) Tj Tstg Repetitive peak off-state voltage 600 Repetitive peak off-state voltage RMS on-state current (full sine wave) Tlead≤ 51℃ Non-repetitive peak on-state current 600 1 16 Peak gate power dissipation 5 Average gate power dissipation 0.5 Operating junction temperature 110 Storage temperature -45~150 UNIT V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS VDRM VRRM ID Repetitive peak off-state voltage Repetitive peak reverse voltage Off-state leakage current Ⅰ ID=0.1mA ID=0.5mA VD= VDRM(max), Tj= 125℃ IGT Gate trigger current Ⅱ VD=12V; IT= 0.1A Ⅲ Ⅳ VTM On-state voltage IH Holding current VGT Gate trigger voltage IT=1.6A IGT=0.1A ,VD= 12V VD=12V ; RL=100Ωall quadrant MIN MAX UNIT 600 V 600 V 0.5 mA 25 25 mA 25 70 1.6 V 5 mA 1.5 V isc website：www.iscsemi.cn ...