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CM30TF-12H

Mitsubishi Electric Semiconductor
Part Number CM30TF-12H
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT Module
Published Mar 23, 2005
Detailed Description MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A C K GUP EUP S - DIA. (2 TYP.) H N H G...
Datasheet PDF File CM30TF-12H PDF File

CM30TF-12H
CM30TF-12H

Overview
MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A C K GUP EUP S - DIA.
(2 TYP.
) H N H GVP EVP GWP EWP P D J U N GUN EUN GVN EVN GWN EWN V W L E R Q B R Q R P TAB #250, t = 0.
8 TAB #110, t = 0.
5 G M F R P Description: Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-F...


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