Document
INTEGRATED CIRCUITS DIVISION
CPC1988
1000V Single-Pole, Normally Open Power Relay
Characteristics
Parameter
Blocking Voltage Load Current, TA=25°C:
With 5°C/W Heat Sink No Heat Sink On-Resistance (max) Thermal Resistance, Junction-to-Case, JC
Rating 1000
2.25 0.9 2.5
0.3
Units VP
Arms
°C/W
Features
• 2.25Arms Load Current with 5°C/W Heat Sink • Low 2.5 On-Resistance • 1000VP Blocking Voltage • 2500Vrms Input/Output Isolation • Low Thermal Resistance: JC = 0.3 °C/W • Isolated, Low Thermal Impedance Ceramic Pad for
Heat Sink Applications • Low Drive Power Requirements • Arc-Free With No Snubbing Circuits • No EMI/RFI Generation • Machine Insertable, Wave Solderable
Applications
• Industrial Controls / Motor Control • Robotics • Medical Equipment—Patient/Equipment Isolation • Instrumentation
• Multiplexers • Data Acquisition • Electronic Switching • I/O Subsystems • Energy Meters • Transportation Equipment • Aerospace/Defense
Approvals
• UL 508 Certified Component: File E69938
Pin Configuration
12
34 -+
e3
Description
IXYS Integrated Circuits Division and IXYS have combined to bring OptoMOS® technology, reliability and compact size to a new family of high-power Solid State Relays.
As part of this family, the CPC1988 single-pole normally open (1-Form-A) Solid State Power Relay is rated for up to 2.25Arms continuous load current with a 5°C/W heat sink.
The CPC1988 employs optically coupled MOSFET technology to provide 2500Vrms of input to output isolation. The optically coupled outputs, that use patented OptoMOS architecture, are controlled by a highly efficient infrared LED. The combination of low on-resistance and high load current handling capability makes this relay suitable for a variety of high performance switching applications.
The unique ISOPLUS-264 package pioneered by IXYS enables Solid State Relays to achieve the highest load current and power ratings. This package features a unique IXYS process where the silicon chips are soft soldered onto the Direct Copper Bond (DCB) substrate instead of the traditional copper leadframe. The DCB ceramic, the same substrate used in high power modules, not only provides 2500Vrms isolation but also very low junction-to-case thermal resistance (0.3 °C/W).
Ordering Information
Part CPC1988J
Description ISOPLUS-264 Package (25 per tube)
Switching Characteristics
Form-A
IF ILOAD
90% ton
10% toff
DS-CPC1988-R07
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1
INTEGRATED CIRCUITS DIVISION
1 Specifications
1.1 Absolute Maximum Ratings @ 25°C
Symbol
Blocking Voltage Reverse Input Voltage Input Control Current Peak (10ms) Input Power Dissipation Isolation Voltage, Input to Output Operational Temperature Storage Temperature
Ratings
1000 5 100 1 150
2500 -40 to +85 -40 to +125
Units
VP V mA A mW Vrms °C °C
CPC1988
Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.
1.2 Electrical Characteristics @ 25°C
Parameter Output Characteristics Load Current 1 Peak Continuous Continuous Continuous On-Resistance 2 Off-State Leakage Current Switching Speeds Turn-On Turn-Off Output Capacitance Input Characteristics Input Control Current to Activate 3 Input Control Current to Deactivate Input Voltage Drop Reverse Input Current Input/Output Characteristics Capacitance, Input-to-Output
Conditions
t10ms No Heat Sink
TC=25°C TC=99°C IF=10mA, IL=0.9A VL=1000VP
IF=20mA, VL=10V VL=25V, f=1MHz
IL=0.9A -
IF=5mA VR=5V
-
Symbol Minimum Typical Maximum Units
IL
IL(99) RON ILEAK
ton toff Cout
IF IF VF IR
CI/O
10 AP 0.9 -9.4 Arms 1.05 - 1.78 2.5 - - 1 A
- 6 20 ms
- 0.11 5
- 540 - pF
- - 10 mA
0.6 -
- mA
0.9 1.2 1.4 V
- - 10 A
- 1 - pF
1 Higher load currents possible with proper heat sinking. 2 Measurement taken within 1 second of on-time. 3 For applications requiring high temperature operation (TC > 60ºC) an LED drive current of 20mA is recommended.
R07 www.ixysic.com
2
INTEGRATED CIRCUITS DIVISION
CPC1988
2 Thermal Characteristics
Parameter Thermal Resistance (Junction to Case) Thermal Resistance (Junction to Ambient) Junction Temperature (Operating)
Conditions -
Free Air -
Symbol
JC JA TJ
Rating 0.3 33
-40 to +100
Units °C/W °C/W
°C
2.1 Thermal Management
Device high current characterization was performed using Kunze heat sink KU 1-159, phase change thermal interface material KU-ALC 5, and transistor clip KU 4-499/1. This combination provided an approximate junction-to-ambient thermal resistance of 12.5°C/W.
2.2 Heat Sink Calculation Higher load currents are possible by using lower thermal resistance heat sink combinations.
Heat Sink Rating
θCA =
(TJ
-
TA)
I2
L(99)
IL2 • PD(99)
- θJC
TJ = Junction Temperature (°C), TJ ≤ 100°C * TA = Ambient Temperature (°C) IL(99) = Load Current with Case Temperature @ 99°C (ADC) IL = Desired Operating Load Current (ADC), IL ≤ I.