Silicon N-Channel MOSFET
2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ...
Description
2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes
Outline
REJ03G1004-0200 (Previous: ADE-208-1352)
Rev.2.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1. Gate G 2. Source
(Flange) 3. Drain
1 2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK2220, 2SK2221
Absolute Maximum Ratings
Item
Drain to source voltage
2SK2220
2SK2221
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Electrical Characteristics
Symbol VDSX
VGSS ID IDR
Pch*1 Tch Tstg
Item
Drain to source
2SK2220
breakdown voltage
2SK2221
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse Test
Symbol V(BR)DSX
V(BR)GSS VGS(off) VDS(sat)
|yfs| Ciss Coss Crss ton toff
Min 180 200 ±20 0.15 — 0.7 — — — — —
Typ — — — — — 1.0 600 800 8 250 90
Ratings 180 200 ±20 8 8 100 150
–55 to +150
(Ta = 25°C)
Unit V
V A A W
°C °C
Max — — — 1.45 12 1.4 — — — — —
(Ta = 25°C)
Unit Test conditions V ID = 10 mA, VGS ...
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