Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
75N05
·DESCRIPTION ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 50V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
50 ±30
75
V V A
ID(puls)
Pulse Drain Current
200 A
Ptot Total Dissipation@TC=25℃
240 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
0.62 ℃/W 80 ℃/W
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
75N05
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=250µA IS=75A ;VGS= 0 VGS= 10V; ID=75A VGS= ±30V;VDS= 0 VDS= 40V; VGS= 0
VGS=10V; ID=37.5A; VDD=25V; RL=0.67Ω
MIN TYPE MAX UNIT 50 V 2.0 4.0 V
2.5 V 0.01 Ω ±100 nA
1 µA 75 17
ns 17 70
isc website:www.iscsemi.cn
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