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75N05 Dataheets PDF



Part Number 75N05
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 75N05 Datasheet75N05 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 75N05 ·DESCRIPTION ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 50 ±30 75 V V A ID(puls) Pulse Drain Current 200 A Ptot Total Dissipation@TC=25℃ 240 W .

  75N05   75N05


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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 75N05 ·DESCRIPTION ·Drain Current ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 50 ±30 75 V V A ID(puls) Pulse Drain Current 200 A Ptot Total Dissipation@TC=25℃ 240 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.62 ℃/W 80 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 75N05 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=250µA IS=75A ;VGS= 0 VGS= 10V; ID=75A VGS= ±30V;VDS= 0 VDS= 40V; VGS= 0 VGS=10V; ID=37.5A; VDD=25V; RL=0.67Ω MIN TYPE MAX UNIT 50 V 2.0 4.0 V 2.5 V 0.01 Ω ±100 nA 1 µA 75 17 ns 17 70 isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .


70N10 75N05 75N10


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