isc N-Channel MOSFET Transistor
FEATURES · Static drain-source on-resistance:
RDS(on) ≤60mΩ · Enhancement mode · Fast S...
isc N-Channel MOSFET
Transistor
FEATURES · Static drain-source on-resistance:
RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRITION · Switching power supplies,converters,AC and DC motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
33
IDM
Drain Current-Single Pulsed
132
PD
Total Dissipation @TC=25℃
150
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.0 62.5
UNIT ℃/W ℃/W
33N10
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=17A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
IDSS
Drain-Source Leakage Current
VDS=100V; VGS= 0V
VSD
Diode forward voltage
Ciss
Input Capacitance
Is=33A; VGS = 0V
Crss
Reverse Transfer capacitance
VDS=25V; VGS=0V; fT=1MHz
Coss
Output Capacitance
33N10
MIN TYP MAX UNIT
100
V
2
4
V
60
mΩ
...