Power MOSFETs
Polar2TM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTP450P2 IXTQ450P2 IXTH450P2
V...
Description
Polar2TM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTP450P2 IXTQ450P2 IXTH450P2
VDSS ID25
RDS(on) trr(typ)
= =
≤ =
500V 16A 330mΩ 400ns
TO-220AB (IXTP)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-220 TO-3P TO-247
Maximum Ratings
500 500
V V
± 30 V ± 40 V
16 A 48 A
16 A 750 mJ
10 V/ns
300 W
-55 ... +150 150
-55 ... +150
300 260
°C °C °C
°C °C
1.13/10 3.0 5.5 6.0
Nm/lb.in. g g g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
500 V
2.5 4.5 V
± 100 nA
5 μA 25 μA
330 mΩ
© 2011 IXYS CORPORATION, All Rights Reserved
GD S TO-3P (IXTQ)
Tab
G D S
TO-247(IXTH)
Tab
G DS
Tab
G = Gate S = Source
D = Drain Tab = Drain
Features
z Avalanche Rated z Fast Intrinsic Diode z Dynamic dv/dt Rated z Low Package Inductance
Advantages
z High Power Density z Easy to Mount z Space Savings
Applications
z Switch-Mode and Resonant-Mode Power Supplies
z DC-DC Converters z Laser Drivers z AC and DC Motor Drive...
Similar Datasheet