TS820

TM HPM HAOPIN MICROELECTRONICS CO.,LTD. TS820 SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Simplified outline ak g 1 2 3 TO-220 Pin Description 1 Cathode 2 Anode 3 Gate Applications: Motor control Industrial and domestic lighting Heating Static switching Features Blocking voltage to 800 V On-state RMS current to 8 A Ultra low gate trigger current SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT RMS RMS on-state current ITSM Non-repetitive peak on-state current 600T 800T Value 600 800 8 73 Unit V A A SYMBOL Rth j-c PARAMETER Junction to case (DC) Rth j-a Junction to ambient (DC) Value 20 70 UNIT /W /W http://www.haopin.com 1/5 TM HPM HAOPIN MICROELECTRONICS CO.,LTD. TS820 SCRs Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER V VDRM RRM IT(RMS) I T ( AV ) ITSM I2t Repetitive peak off-state Voltages RMS on-state current Average on-state current Non-repetitive peak on-state current I2t for fusing CONDITIONS all conduction angles Half sine wave;<=111 half sine wave; Tj = 25 prior to surge T=10ms 600T 800T t=10ms t=8.3ms Tj=25 MIN - - DIT/dt IGM VRGM PGM P G(AV) Tstg Tj Critical rate of rise of on-state current IG=2*IGT, tr Peak gate current ...