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CM200DY-24H

Mitsubishi Electric Semiconductor

IGBT Module

MITSUBISHI IGBT MODULES CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G P C2E1 E2 C1 G2 E2 C D G1 E1 ...



CM200DY-24H

Mitsubishi Electric Semiconductor


Octopart Stock #: O-103357

Findchips Stock #: 103357-F

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Description
MITSUBISHI IGBT MODULES CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F F G P C2E1 E2 C1 G2 E2 C D G1 E1 J P K N - DIA. (4 TYP.) M M Q - M6 THD (3 TYP.) R TAB#110 t=0.5 L E H Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DY-24H is a 1200V (VCES), 200 Ampere Dual IGBT Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 24 M G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 4.25 3.66±0.01 2.44 1.89±0.01 1.22 Max. 0.98 0.85 0.60 Millimeters 108.0 93.0±0.25 62.0 48.0±0.25 31.0 Max. 25.0 21.5 15.2 Dimensions J K L M N P Q R Inches 0.59 0.55 0.30 0.28 0.256 Dia. 0.24 M6 Metric 0.20 Millimeters 15.0 14.0 8.5 7.0 Dia. 6.5 6.0 M6 5.0 Sep.1998 MITSUBISHI IGBT MODULES CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute ...




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