IS61DDB44M18A

IS61DDB44M18A IS61DDB42M36A 4Mx18, 2Mx36 72Mb DDR-II (Burst 4) CIO SYNCHRONOUS SRAM JANUARY 2015 FEATURES  2Mx36 and 4Mx18 configuration available.  On-chip delay-locked loop (DLL) for wide data valid window.  Common I/O read and write ports.  Synchronous pipeline read with late write operation.  Double Data Rate (DDR) interface for read and write input ports.  Fixed 4-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two input clocks (C and C#) for data output control.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  +1.8V core power supply and 1.5V to1.8V VDDQ, used with 0.75V to 0.9V VREF.  HSTL input and output interface.  Registered addresses, write and read controls, byte writes, data in, and data outputs.  Full data coherency.  Boundary scan using limited set of JTAG 1149.1 functions.  Byte write capability.  Fine ball grid array (FBGA) package: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array  Programmable impedance output drivers via 5x user-supplied precision resistor. DESCRIPTION The 72Mb IS61DDB42M36A and IS61DDB44M18A are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have a common I/O bus. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagram for Truth Table for a descriptio...