Document
CM150TF-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six-IGBT IGBTMOD™ H-Series Module
150 Amperes/600 Volts
B D X Q X Q X Z - M5 THD (7 TYP.) S N
Bu P Eu P
Bv P Ev P
BwP EwP
P R L C
N
P P Bu N Eu N Bv N Ev N BwN EwN
J
TYP
U N V W
A
K
T
G
F
U W AA
M M E AA Y - DIA. (4 TYP.) .110 TAB
H
J V P BuP EuP u BvP EvP v BwP EwP w P
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM150TF-12H is a 600V (VCES), 150 Ampere Six-IGBT IGBTMOD™ Power Module.
Type CM Current Rating Amperes 150 VCES Volts (x 50) 12
BuN EuN N
BvN EvN
BwN
EwN
N
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 4.21 4.02 3.543± 0.01 3.15± 0.01 1.57 1.38 1.28 1.26 Max. 1.18 0.98 0.96 0.79 0.67 Millimeters 107.0 102.0 90.0± 0.25 80.0± 0.25 40.0 35.0 32.5 32.0 Max 30.0 25.0 24.5 20.0 17.0 Dimensions P Q R S T U V W X Y Z AA Inches 0.57 0.55 0.47 0.43 0.39 0.33 0.30 0.24 Rad. 0.24 0.22 M5 Metric 0.08 Millimeters 14.5 14.0 12.0 11.0 10.0 8.5 7.5 Rad. 6.0 6.0 5.5 M5 2.0
319
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150TF-12H Six-IGBT IGBTMOD™ H-Series Module 150 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd – – – VRMS
CM150TF-12H –40 to 150 –40 to 125 600 ± 20 150 300* 150 200* 600 17 17 830 2500
Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V IC = 150A, VGE = 15V, Tj = 150°C Total Gate Charge Diode Forward Voltage VCC = 300V, IC = 150A, VGS = 15V IE = 150A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.1 2.15 450 – Max. 1.0 0.5 7.5 2.8** – – 2.8 Units mA
µA
Volts Volts Volts nC Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 150A, diE/dt = –300A/µs IE = 150A, diE/dt = –300A/µs VCC = 300V, IC = 150A, VGE1 = VGE2 = 15V, RG = 4.2Ω VGE = 0V, VCE = 10V, 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.41 Max. 15 5.3 3 200 550 300 300 110 – Units nF nF nF ns ns ns ns ns
Diode Reverse Recovery Time Diode Reverse Recovery Charge
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.21 0.47 0.025 Units °C/W °C/W °C/W
320
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM150TF-12H Six-IGBT IGBTMOD™ H-Series Module 150 Amperes/600 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
300
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
300 250 200 150 100 50 0 0 2 4 6 8 10 0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES)
5
VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C
250 200 150
VGE.