INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
30N10
·FEATURES ·Drain Current ID= 30...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
30N10
·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.77Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
100 ±30
V V
ID Drain Current-Continuous
30 A
PD Total Dissipation @TC=25℃
79 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
30N10
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 30A ;VGS= 0 VGS= 6V; ID= 15A VGS= ±30V;VDS= 0 VDS=100V; VGS= 0
MIN TYPE MAX UNIT 100 V 2.0 4.0 V
1.5 V 0.77 Ω ±100 nA 200 µA
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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...