Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N60
·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.21Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
600 ±30
V V
ID Drain Current-Continuous
25 A
IDM Drain Current-Single Plused
80 A
PD Total Dissipation @TC=25℃
300 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
25N60
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 25A ;VGS= 0 VGS= 10V; ID= 12.5A VGS= ±20V;VDS= 0 VDS=600V; VGS= 0
MIN TYPE MAX UNIT 600 V 2.0 4.0 V
1.5 V 0.21 Ω ±100 nA 50 µA
·
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
.