Part Number |
22N10 |
Manufacturers |
Inchange Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
22N10 Datasheet (PDF) |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
22N10
·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.08Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
100 ±30
V V
ID Drain Current-Continuous
22 A
IDM Drain Current-Single Plused
50 A
PD Total Dissipation @TC=25℃
100 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.5 ℃/W
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
22N10
·ELECTRICAL CHARACTERIST.