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EMB17A03G

Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 17mΩ ID 10A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB17A03G LIMITS UNIT Gate‐Source Voltage VGS ...

Excelliance MOS

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