Dual N-Channel Logic Level Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C396V8 Issued Date : 2013.08.09 Revised Date : 2013.08.14 Page No. : 1/9
Dual N-...
Description
CYStech Electronics Corp.
Spec. No. : C396V8 Issued Date : 2013.08.09 Revised Date : 2013.08.14 Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode MOSFET
MTB17A03V8 BVDSS ID
RDSON(TYP)
VGS=10V, ID=6A VGS=4.5V, ID=4A
30V 7A 16mΩ 25mΩ
Description
The MTB17A03V8 consists of two N-channel enhancement-mode MOSFETs in a DFN3×3 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB17A03V8
Outline
DFN3×3
G:Gate D:Drain S:Source
Pin 1
Ordering Information
Device MTB17A03V8-T1-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
MTB17A03V8
CYStek Product Specification
CYStech Electronics Corp.
The following characteristics apply to each MOSFET.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
Single device operation Single device value at dual operation
Symbol VDS VGS
ID
IDM
PD
Operating Junction and Storage Temperature Range
Tj, Tstg
Spec. No. : C396V8 Issued Date : 2013.08.09 Revised Date : 2013.08.14 Page No. :...
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