Document
MITSUBISHI IGBT MODULES
CM10MD-24H
MEDIUM POWER SWITCHING USE INSULATED TYPE
CM10MD-24H
¡IC ..................................................................... 10A ¡VCES ......................................................... 1200V ¡Insulated Type ¡CIB Module 3φ Inverter+3φ Converter+Brake ¡UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics
OUTLINE DRAWING & CIRCUIT DIAGRAM
P P1 GU R S T B EU GV EV GW EW
Dimensions in mm
D
2.54 2.54 2.54 2.54
2.54 2.54 2.54
GB
GU
GV
GW E
7.5 8
8 12.28 7.62 7.62 7.62
GW EU EV GV EW GW GV GU GB E
N 2 - φ4.8 ±0.1 MOUNTING HOLES
U
V CIRCUIT DIAGRAM
W
P
P1
N
GU
9 ±0.1
54
64 ±0.5
9 ±0.1
LABEL
53 ±0.5
R
S
T
B
U
V
W
2 - φ4.8 ±0.2 GUIDE HOLE 8
26.5 ±0.3
26.5 ±0.3
32
2 1 (30°) t = 0.5 0.8 t = 0.5
16.5 5
+1.0 –0.5
8
8
12.5 12.5 80 ±0.3 90 ±0.5
8
8
5.3
5
+1.0 –0.5
MAIN CIRCUIT TERMINAL
CONTROL CIRCUIT TERMINAL
Note. Not use the guiding holes to mount on the cooling fin.
Feb.1999
MITSUBISHI IGBT MODULES
CM10MD-24H
MEDIUM POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS INVERTER PART
Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3)
(Tj = 25°C)
Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G – E Short C – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C
Condition
(Note. 2)
(Note. 2)
Rating 1200 ±20 10 20 10 20 57
Unit V V A A A A W
BRAKE PART
Symbol VCES VGES IC ICM PC (Note. 3) VRRM IFM (Note. 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum Collector dissipation Repetitive peak reverse voltage Forward current G – E Short C – E Short TC = 25°C PULSE Tf = 25°C Clamp diode part Clamp diode part Condition Rating 1200 ±20 10 20 57 1200 10 Unit V V A A W V A
(Note. 2)
CONVERTER PART
Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition Rating 1600 440 10 100 42 Unit V V A A A 2s
3φ rectifying circuit 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current
COMMON RATING
Symbol Tj Tstg Viso — — Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition Rating –40 ~ +150 –40 ~ +125 2500 1.47 ~1.96 60 Unit °C °C V N.m g
AC 1 min. Mounting M4 screw Typical value
Feb.1999
MITSUBISHI IGBT MODULES
CM10MD-24H
MEDIUM POWER SWITCHING USE INSULATED TYPE
ELECTRICAL CHARACTERISTICS INVERTER PART
Symbol ICES Parameter
(Tj = 25°C)
Test conditions VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 10A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 600V, IC = 10A, VGE = 15V VCC = 600V, IC = 10A VGE1 = VGE2 = 15V RG = 31Ω Resistive load IE = 10A, VGE = 0V IE = 10A, VGE = 0V die / dt = – 20A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module
Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5)
Min. — 4.5 — — — — — — — — — — — — — — — —
Limits Typ. — 6 — 2.7 2.45 — — — 50 — — — — — — 0.08 — —
Max. 1 7.5 0.5 3.4 — 2.0 1.5 0.4 — 100 200 150 350 3.5 250 — 2.2 3.1
Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC °C/W °C/W
(Note. 4)
BRAKE PART
Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 10A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 600V, IC = 10A, VGE = 15V IF = 10A, Clamp diode part IGBT part Clamp diode part Condition Min. — 4.5 — — — — — — — — — — Limits Typ. — 6 — 2.7 2.45 — — — 50 — — — Max. 1 7.5 0.5 3.4 — 2.0 1.5 0.4 — 1.7 2.2 2.7 Unit mA V µA V nF nF nF nC V °C/W °C/W
(Note. 4)
Cies Coes Cres QG VFM Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5)
CONVERTER PART
Symbol Parameter VR = VRRM, Tj = 150°C IF = 10A Per 1/6 module Condition Min. — — — Limits Typ. — — — Max. 8 1.7 2.7 Unit mA V °C/W
Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance
Note 1. 2. 3. 4. 5.
IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does no.