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CM10MD-24H Dataheets PDF



Part Number CM10MD-24H
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description IGBT Module
Datasheet CM10MD-24H DatasheetCM10MD-24H Datasheet (PDF)

MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM10MD-24H ¡IC .... 10A ¡VCES .. 1200V ¡Insulated Type ¡CIB Module 3φ Inverter+3φ Converter+Brake ¡UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics OUTLINE DRAWING & CIRCUIT DIAGRAM P P1 GU R S T B .

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MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM10MD-24H ¡IC ..................................................................... 10A ¡VCES ......................................................... 1200V ¡Insulated Type ¡CIB Module 3φ Inverter+3φ Converter+Brake ¡UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics OUTLINE DRAWING & CIRCUIT DIAGRAM P P1 GU R S T B EU GV EV GW EW Dimensions in mm D 2.54 2.54 2.54 2.54 2.54 2.54 2.54 GB GU GV GW E 7.5 8 8 12.28 7.62 7.62 7.62 GW EU EV GV EW GW GV GU GB E N 2 - φ4.8 ±0.1 MOUNTING HOLES U V CIRCUIT DIAGRAM W P P1 N GU 9 ±0.1 54 64 ±0.5 9 ±0.1 LABEL 53 ±0.5 R S T B U V W 2 - φ4.8 ±0.2 GUIDE HOLE 8 26.5 ±0.3 26.5 ±0.3 32 2 1 (30°) t = 0.5 0.8 t = 0.5 16.5 5 +1.0 –0.5 8 8 12.5 12.5 80 ±0.3 90 ±0.5 8 8 5.3 5 +1.0 –0.5 MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL Note. Not use the guiding holes to mount on the cooling fin. Feb.1999 MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G – E Short C – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C Condition (Note. 2) (Note. 2) Rating 1200 ±20 10 20 10 20 57 Unit V V A A A A W BRAKE PART Symbol VCES VGES IC ICM PC (Note. 3) VRRM IFM (Note. 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum Collector dissipation Repetitive peak reverse voltage Forward current G – E Short C – E Short TC = 25°C PULSE Tf = 25°C Clamp diode part Clamp diode part Condition Rating 1200 ±20 10 20 57 1200 10 Unit V V A A W V A (Note. 2) CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition Rating 1600 440 10 100 42 Unit V V A A A 2s 3φ rectifying circuit 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current COMMON RATING Symbol Tj Tstg Viso — — Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition Rating –40 ~ +150 –40 ~ +125 2500 1.47 ~1.96 60 Unit °C °C V N.m g AC 1 min. Mounting M4 screw Typical value Feb.1999 MITSUBISHI IGBT MODULES CM10MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol ICES Parameter (Tj = 25°C) Test conditions VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 10A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 600V, IC = 10A, VGE = 15V VCC = 600V, IC = 10A VGE1 = VGE2 = 15V RG = 31Ω Resistive load IE = 10A, VGE = 0V IE = 10A, VGE = 0V die / dt = – 20A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Min. — 4.5 — — — — — — — — — — — — — — — — Limits Typ. — 6 — 2.7 2.45 — — — 50 — — — — — — 0.08 — — Max. 1 7.5 0.5 3.4 — 2.0 1.5 0.4 — 100 200 150 350 3.5 250 — 2.2 3.1 Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC °C/W °C/W (Note. 4) BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop VCE = VCES, VGE = 0V IC = 1.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 10A, VGE = 15V Tj = 150°C VCE = 10V VGE = 0V VCC = 600V, IC = 10A, VGE = 15V IF = 10A, Clamp diode part IGBT part Clamp diode part Condition Min. — 4.5 — — — — — — — — — — Limits Typ. — 6 — 2.7 2.45 — — — 50 — — — Max. 1 7.5 0.5 3.4 — 2.0 1.5 0.4 — 1.7 2.2 2.7 Unit mA V µA V nF nF nF nC V °C/W °C/W (Note. 4) Cies Coes Cres QG VFM Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) CONVERTER PART Symbol Parameter VR = VRRM, Tj = 150°C IF = 10A Per 1/6 module Condition Min. — — — Limits Typ. — — — Max. 8 1.7 2.7 Unit mA V °C/W Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does no.


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