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DMN15H310SE

Diodes

N-CHANNEL MOSFET


Description
ADVANCE INFORMATION Product Summary V(BR)DSS 150V RDS(ON) max 310mΩ @ VGS = 10V 330mΩ @ VGS = 5.0V ID TA = +25°C 2.0A 1.9A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Mot...



Diodes

DMN15H310SE

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