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DMN10H170SFG

Diodes

N-Channel MOSFET


Description
NEW PRODUCT Product Summary V(BR)DSS 100V RDS(ON) max 122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2.7A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Backlighting  P...



Diodes

DMN10H170SFG

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