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CM100DY-24H

Mitsubishi Electric Semiconductor

IGBT Module

MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1...



CM100DY-24H

Mitsubishi Electric Semiconductor


Octopart Stock #: O-103164

Findchips Stock #: 103164-F

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Description
MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P - DIA. (2 TYP.) J J J TAB#110 t=0.5 N N M D F Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM100DY-24H is a 1200V (VCES), 100 Ampere Dual IGBT Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 24 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.70 3.150±0.01 1.89 1.18 Max. 0.90 0.83 0.71 0.67 0.62 Millimeters 94.0 80.0±0.25 48.0 30.0 Max. 23.0 21.2 18.0 17.0 16.0 Dimensions K L M N P Q R S Inches 0.51 0.47 0.30 0.28 0.256 Dia. 0.31 M5 Metric 0.16 Millimeters 13.0 12.0 7.5 7.0 Dia. 6.5 8.0 M5 4.0 Sep.1998 MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A...




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