IGBT
1200V XPTTM IGBTs GenX3TM
High-Speed IGBT for 20-50 kHz Switching
Preliminary Technical Information
IXYK100N120C3 IXYX...
Description
1200V XPTTM IGBTs GenX3TM
High-Speed IGBT for 20-50 kHz Switching
Preliminary Technical Information
IXYK100N120C3 IXYX100N120C3
VCES = IC110 = V ≤CE(sat) tfi(typ) =
1200V 100A
3.5V 110ns
TO-264 (IXYK)
Symbol
VCES VCGR
VGES VGEM
IC25 ILRMS IC110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
Continuous Transient
1200 1200
±20 ±30
V V
V V
TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load
TC = 25°C
188 160 100 490
50 1.2
ICM = 200
≤@VCE VCES
1150
-55 ... +175 175
-55 ... +175
A A A A
A J
A
W
°C °C °C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300 °C 260 °C
Mounting Torque (TO-264) Mounting Force (PLUS247)
1.13/10 20..120 /4.5..27
Nm/lb.in. N/lb.
TO-264 PLUS247
10 g 6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
IC110,
VGE
=
15V,
Note
1 TJ
=
150°C
Characteristic Values Min. Typ. Max.
1200
V
3.0 5.0 V
25 μA 1.25 mA
±100 nA
2.9 3.5 V 4.1 V
G C E
PLUS247 (IXYX)
Tab
G
G C
E
Tab
G = Gate C = Collector
E = Emitter Tab = Collector
Features
z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of
Vce(sat) z Avalanche Rated z Hig...
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