IGBT
1200V XPTTM IGBT GenX3TM w/ Diode
IXYH40N120B3D1
Extreme Light Punch Through IGBT for 5-30 kHz Switching
VCES = IC110...
Description
1200V XPTTM IGBT GenX3TM w/ Diode
IXYH40N120B3D1
Extreme Light Punch Through IGBT for 5-30 kHz Switching
VCES = IC110 = V ≤CE(sat) tfi(typ) =
1200V 40A
2.9V 183ns
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
Continuous Transient
TC = 25°C (Chip Capability)
TTCC
= 110°C = 110°C
TC = 25°C, 1ms
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10Ω Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
1200 1200
V V
±20 V ±30 V
86 A 40 A 25 A
180 A
20 A 400 mJ
ICM = 80
≤@VCE VCES
480
A W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C 260 °C
1.13/10 Nm/lb.in.
6g
TO-247 AD
G CE
G = Gate E = Emitter
Tab
C = Collector Tab = Collector
Features
z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of
Vce(sat) z Anti-Parallel Ultra Fast Diode z Avalanche Rated z International Standard Package
Advantages
z High Power Density z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1 TJ
=
150°C
Characteristic Values Min. Typ. Max.
1200
V
3.0 5.0 V
50 μA 500 μA
±100 nA
2.4 2.9 V 3.1 V
Applications
z Power Inverters z ...
Similar Datasheet
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