A2I20H060NR1

Freescale Semiconductor Technical Data Document Number: A2I20H060N Rev. 0, 2/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. 1800 MHz  Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1A = 24 mA, IDQ2A = 145 mA, VGS1B = 1.65 Vdc, VPGroSb2aBb=ilit1y.3onVdCcC, DPFou. t(1=) 12 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Frequency Gps (dB) PAE (%) ACPR (dBc) 1805 MHz 1840 MHz 1880 MHz 28.5 42.7 –37.4 28.4 43.8 –37.8 28.1 43.1 –34.7 2100 MHz  Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ1A = 24 mA, IDQ2A = 145 mA, VGS1B = 1.65 Vdc, VGS2B = 1.3 Vdc, Pout = 12 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1) Frequency Gps (dB) PAE (%) ACPR (dBc) 2110 MHz 27.8 42.3 –36.0 2140 MHz 27.5 42.2 –38.3 2170 MHz 27.3 42.2 –37.7 Features  Advanced High Performance In--Package Doherty  On--Chip Matching (50 Ohm Input, DC Blocked)  Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2)  Designed for Digital Predistortion Error Correction Systems A2I20H060NR1 A2I20H060GNR1 1800–2200 MHz, 12 W AVG., 28 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO--270WB--15 PLASTIC A2I20H060N...