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STC8050
0 NPN Silicon Transistor
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to STC8550
• Collector Current: IC=1.5A • Collector Power Dissipation: PC=2W (TC=25°C)
1 TO-92 1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO VCEO VEBO IC PC TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
Ratings 40 40 6 1.5 1 150
65 ~ 150
Units V V V A W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE (on) Cob
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage Output Capacitance
Test Condition
IC= 100µA, IE=0 IC= 2mA, IB=0 IE= 100µA, IC=0 VCB= 35V, IE=0 VEB= 6V, IC=0 VCE= 1V, IC= 5mA VCE= 1V, IC= 100mA VCE= 1V, IC= 800mA IC= 800mA, IB= 80mA IC= 800mA, IB= 80mA VCE= 1V, IC= 10mA VCB= 10V, IE=0 f=1MHz
fT
Current Gain Bandwidth Product
VCE= 10V, IC= -50mA
Min. 40 40 6
45 85 40
100
Typ.
170 160 80 0.28 0.98 0.66 15 200
Max.
100 100
Units V V V nA nA
300
0.5 V 1.2 V 1.0 V
pF
MHz
hFEClassification
Classification hFE2
A 85 ~ 160
B 120 ~ 200
C 200 ~ 400
Typical Characteristics
STC8050
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-0.5 IB=-4.0mA
-0.4 IB=-3.5mA IB=-3.0mA
-0.3 IB=-2.5mA IB=-2.0mA
-0.2 IB=-1.5mA
IB=-1.0mA -0.1
IB=-0.5mA
-0.4 -0.8 -1.2 -1.6 -2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10000
IC=10IB
-1000 -100
VBE(sat) VCE(sat)
-10 -0.1
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1000
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
100
f=1MHz IE=0
IC[mA], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
1000 100
VCE = -1V
10
1 -0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 2. DC current Gain
-1000
-100
VCE = -1V
-10
-1
-0.1 -0.0
-0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
-1.2
Figure 4. Base-Emitter On Voltage
1000
VCE=-10V
10 100
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Cob[pF], CAPACITANCE
1
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
10 -1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
.