IXYN120N65C3D1

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYN120N65C3D1 Extreme Light Punch through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TVISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load VGE = 15V, VCE = 400V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque E Maximum Ratings 650 650 ±20 ±30 V V V V 190 A 100 A 72 A 620 A 60 A 1J ICM = 240 VCE VCES 8 A μs 830 -55 ... +175 175 -55 ... +175 2500 3000 1.5/13 1.3/11.5 30 W °C °C °C V~ V~ Nm/lb.in Nm/lb.in g VCES = 650V IC110 = 100A VCE(sat)  2.8V tfi(typ) = 46ns SOT-227B, miniBLOC E153432 E G E C G = Gate, C = Collector, E = Emitter  either emitter terminal can be used as Main or Kelvin Emitter Features  International Standard Package  miniBLOC, with Aluminium Nitride Isolation  2500V~ Isolation Voltage  Optimized for 20-60kHz Switching  Square RBSOA  Avalanche Rated  Short Circuit Capability  High Current Handling Capability  Anti-Parallel Fast Diode Advantages  High Power Density  Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES...