IXYN100N120C3H1

1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching Preliminary Technical Information IXYN100N120C3H1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1200 1200 V V ±20 V ±30 V 134 A 62 A 42 A 440 A 50 A 1.2 J ICM = 200 ≤@VCE VCES 690 A W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.3/11.5 Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 μA 3 mA ±100 nA 2.9 3.5 V 3.9 V SOT-227B, miniBLOC E153432 Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z Optimized for Low Switching Losses z Square RBSOA z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Cu...