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CLY38-10

Infineon Technologies AG

HiRel C-Band GaAs Power-MESFET

CLY38 HiRel C-Band GaAs Power-MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional power amp...


Infineon Technologies AG

CLY38-10

File Download Download CLY38-10 Datasheet


Description
CLY38 HiRel C-Band GaAs Power-MESFET HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 100 MHz to 4.2 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 53 % Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5614/008, Type Variant No.s 01 to 03 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D Package CLY38-00 (ql) CLY38-05 (ql) CLY38-10 (ql) - see below G MWP-35 CLY38-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62702L111 on request on request Q62702L110 (see order instructions for ordering example) Semiconductor Group 1 of 10 Draft D, September 99 CLY38 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current Compression Level 1) Operation Range 1 Symbol VDS VDG VGS ID IG PC Values 14 16 -6 5.6 32 1.5 at VDS ≤ 9 V 2.5 at VDS ≤ 8 V 3.5 at VDS ≤ 7 V Unit V V V A mA dB Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation 4) PC PC TJ Tstg Ptot Tsol 3.5 at VDS ≤ 7 V tbd. 175 - 65...+ 1...




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