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SM8S10A thru SM8S43A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
DO-218AB
Cathode
Anode
PRIMARY CHARACTERISTICS
VBR VWM PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max. Polarity
11.1 V to 52.8 V 10 V to 43 V 6600 W 5200 W 8W 700 A 175 °C Unidirectional
Package
DO-218AB
FEATURES • Junction passivation optimized design passivated
anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability
and automotive requirement • Available in unidirectional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test
condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application.
MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Peak pulse power dissipation
with 10/1000 μs waveform with 10/10 000 μs waveform
PPPM
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range
PD IPPM (1)
IFSM TJ, TSTG
Note (1) Non-repetitive current pulse derated above TA = 25 °C
VALUE 6600 5200 8.0
See next table 700
-55 to +175
UNIT
W
W A A °C
Revision: 10-Nov-2023
1
Document Number: 88387
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SM8S10A thru SM8S43A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
DEVICE TYPE
BREAKDOWN VOLTAGE VBR (V)
MIN. NOM. MAX.
TEST
CURRENT
IT (mA)
STAND-OFF
VOLTAGE
VWM (V)
MAXIMUM REVERSE LEAKAGE
AT VWM ID (μA)
MAXIMUM
REVERSE
LEAKAGE
AT VWM TJ = 175 °C
ID (μA)
MAX. PEAK PULSE
CURRENT AT 10/1000 μs WAVEFORM
(A)
SM8S10A 11.1 11.7 12.3
5.0
10.0
15
250
388
MAXIMUM CLAMPING VOLTAGE
AT IPPM VC (V)
17.0
TYPICAL TEMP.
COEFFICIENT OF VBR (1) αT (%/°C)
0.069
SM8S11A 12.2 12.9 13.5
5.0
11.0
10
150
363
18.2
0.072
SM8S12A 13.3 14.0 14.7
5.0
12.0
10
150
332
19.9
0.074
SM8S13A 14.4 15.2 15.9
5.0
13.0
10
150
307
21.5
0.076
SM8S14A 15.6 16.4 17.2
5.0
14.0
10
150
284
23.2
0.078
SM8S15A 16.7 17.6 18.5
5.0
15.0
10
150
270
24.4
0.080
SM8S16A 17.8 18.8 19.7
5.0
16.0
10
150
254
26.0
0.081
SM8S17A 18.9 19.9 20.9
5.0
17.0
10
150
239
27.6
0.082
SM8S18A 20.0 21.1 22.1
5.0
18.0
10
150
226
29.2
0.083
SM8S20A 22.2 23.4 24.5
5.0
20.0
10
150
204
32.4
0.085
SM8S22A 24.4 25.7 26.9
5.0
22.0
10
150
186
35.5
0.086
SM8S24A 26.7 28.1 29.5
5.0
24.0
10
150
170
38.9
0.087
SM8S26A 28.9 30.4 31.9
5.0
26.0
10
150
157
42.1
0.088
SM8S28A 31.1 32.8 34.4
5.0
28.0
10
150
145
45.4
0.089
SM8S30A 33.3 35.1 36.8
5.0
30.0
10
150
136
48.4
0.090
SM8S33A 36.7 38.7 40.6
5.0
33.0
10
150
124
53.3
0.091
SM8S36A 40.0 42.1 44.2
5.0
36.0
10
150
114
58.1
0.091
SM8S40A 44.4 46.8 49.1
5.0
40.0
10
150
102
64.5
0.092
SM8S43A 47.8 50.3 52.8
5.0
43.0
10
150
95.1
69.4
0.093
Notes
• For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(1) To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25))
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to case
RθJC
VALUE 0.90
UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SM8S10AHE3_A/I (1)
2.605
I
Note (1) AEC-Q101 qualified
BASE QUANTITY 750
DELIVERY MODE
13" diameter plastic tape and reel, anode towards the sprocket hole
Revision: 10-Nov-2023
2
Document Number: 88387
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SU.