DatasheetsPDF.com

SM8S10A Dataheets PDF



Part Number SM8S10A
Manufacturers Vishay
Logo Vishay
Description Transient Voltage Suppressors
Datasheet SM8S10A DatasheetSM8S10A Datasheet (PDF)

www.vishay.com SM8S10A thru SM8S43A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-218AB Cathode Anode PRIMARY CHARACTERISTICS VBR VWM PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max. Polarity 11.1 V to 52.8 V 10 V to 43 V 6600 W 5200 W 8W 700 A 175 °C Unidirectional Package DO-218AB FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 17.

  SM8S10A   SM8S10A


Document
www.vishay.com SM8S10A thru SM8S43A Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions DO-218AB Cathode Anode PRIMARY CHARACTERISTICS VBR VWM PPPM (10 x 1000 μs) PPPM (10 x 10 000 μs) PD IFSM TJ max. Polarity 11.1 V to 52.8 V 10 V to 43 V 6600 W 5200 W 8W 700 A 175 °C Unidirectional Package DO-218AB FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability and automotive requirement • Available in unidirectional polarity only • Low leakage current • Low forward voltage drop • High surge capability • Meets ISO7637-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: heatsink is anode MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Peak pulse power dissipation with 10/1000 μs waveform with 10/10 000 μs waveform PPPM Power dissipation on infinite heatsink at TC = 25 °C (fig. 1) Peak pulse current with 10/1000 μs waveform Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range PD IPPM (1) IFSM TJ, TSTG Note (1) Non-repetitive current pulse derated above TA = 25 °C VALUE 6600 5200 8.0 See next table 700 -55 to +175 UNIT W W A A °C Revision: 10-Nov-2023 1 Document Number: 88387 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SM8S10A thru SM8S43A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (V) MIN. NOM. MAX. TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 175 °C ID (μA) MAX. PEAK PULSE CURRENT AT 10/1000 μs WAVEFORM (A) SM8S10A 11.1 11.7 12.3 5.0 10.0 15 250 388 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 17.0 TYPICAL TEMP. COEFFICIENT OF VBR (1) αT (%/°C) 0.069 SM8S11A 12.2 12.9 13.5 5.0 11.0 10 150 363 18.2 0.072 SM8S12A 13.3 14.0 14.7 5.0 12.0 10 150 332 19.9 0.074 SM8S13A 14.4 15.2 15.9 5.0 13.0 10 150 307 21.5 0.076 SM8S14A 15.6 16.4 17.2 5.0 14.0 10 150 284 23.2 0.078 SM8S15A 16.7 17.6 18.5 5.0 15.0 10 150 270 24.4 0.080 SM8S16A 17.8 18.8 19.7 5.0 16.0 10 150 254 26.0 0.081 SM8S17A 18.9 19.9 20.9 5.0 17.0 10 150 239 27.6 0.082 SM8S18A 20.0 21.1 22.1 5.0 18.0 10 150 226 29.2 0.083 SM8S20A 22.2 23.4 24.5 5.0 20.0 10 150 204 32.4 0.085 SM8S22A 24.4 25.7 26.9 5.0 22.0 10 150 186 35.5 0.086 SM8S24A 26.7 28.1 29.5 5.0 24.0 10 150 170 38.9 0.087 SM8S26A 28.9 30.4 31.9 5.0 26.0 10 150 157 42.1 0.088 SM8S28A 31.1 32.8 34.4 5.0 28.0 10 150 145 45.4 0.089 SM8S30A 33.3 35.1 36.8 5.0 30.0 10 150 136 48.4 0.090 SM8S33A 36.7 38.7 40.6 5.0 33.0 10 150 124 53.3 0.091 SM8S36A 40.0 42.1 44.2 5.0 36.0 10 150 114 58.1 0.091 SM8S40A 44.4 46.8 49.1 5.0 40.0 10 150 102 64.5 0.092 SM8S43A 47.8 50.3 52.8 5.0 43.0 10 150 95.1 69.4 0.093 Notes • For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (1) To calculate VBR vs. junction temperature, use the following formula: VBR at TJ = VBR at 25 °C x (1 + αT x (TJ - 25)) THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to case RθJC VALUE 0.90 UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE SM8S10AHE3_A/I (1) 2.605 I Note (1) AEC-Q101 qualified BASE QUANTITY 750 DELIVERY MODE 13" diameter plastic tape and reel, anode towards the sprocket hole Revision: 10-Nov-2023 2 Document Number: 88387 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SU.


SM8S10 SM8S10A SM8S11


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)